林兰英院士科研活动论著选集【2025|PDF|Epub|mobi|kindle电子书版本百度云盘下载】

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林兰英传略1

《中国女院士——林兰英》目录2

中国女院士——林兰英（节选）3

女院士林兰英的童年5

中国女院士林兰英传奇之一：为了古老而年轻的祖国11

中国太空材料之母16

《中国女院士林兰英》文学传记问世25

女科学家的最后冲刺26

林兰英院士简历29

感言录和访问记31

林兰英先生和北方微电子研究开发基地32

生命不息、攀登不止——记我所认识的林兰英院士34

学习林兰英先生为科学事业不断开拓永不休止的献身精神36

良师益友38

学界之尊，青年楷模40

林兰英院士对我的教诲42

晶莹的种子——记半导体材料专家林兰英44

中国第一根单晶硅研制者48

一个科学家的心愿——访问林兰英同志51

生命的鼓点永远铿锵有力——物理学家林兰英谈她与文艺54

平等，首先是贡献上的平等——访中国科学院女院士林兰英56

乡情·国情·科学情——访全国人大代表、中科院院士林兰英58

林兰英科学论文选61

A 单晶篇62

A1 EFFECTS OF POINT DEFECTS ON LATTICE PARAMETERS OF SEMICONDUCTORS63

A2 NONDESTRUCTIVE MEASUREMENTS OF STOICHIOMETRY IN UNDOPED SEMIINSULATING GALLIUM ARSENIDE BY X-RAY BOND METHOD74

A3 DISLOCATIONS AND PRECIPITATES IN SEMI-INSULATING GALLIUM ARSENIDE REVEALED BY ULTRASONIC ABRAHAMS-BUIOCCHI ETCHING79

A4 STOICHIOMETRIC DEFECTS IN SEMI-INSULATING GaAs82

A5 THE ROLE OF HYDROGEN IN SEMI-INSULATING INP88

A6 RELATIONSHIP BETWEEN DEEP-LEVEL CENTERS AND STOICHIOMETRY IN SEMI-INSULATING GALLIUM ARSENIDE93

A7 LEC掺In-GaAs单晶中的一种新型缺陷97

A8 氢气和氩气中区熔生长的中子嬗变掺杂硅退火行为的研究104

B 空间篇112

B1 GaAs SINGLE CRYSTAL GROWTH FROM MELT IN SPACE113

B2 SPATIAL DISTRIBUTIONS OF IMPURITIES AND DEFECTS IN Te-AND Si-DOPED GaAs GROWN IN A REDUCED GRAVITY ENVIRONMENT118

B3 PREPARATION AND PROPERTIES OF SEMI-INSULATING GaAs SINGLE CRYSTAL UNDER MICROGRAVITY CONDITIONS127

B4 PREPARATION OF 24mm DIAMETER GaAs CRYSTAL IN SPACE133

B5 PROPERTIES AND APPLICATIONS OF GaAs SINGLE CRYSTAL GROWN UNDER MICROGRAVITY CONDITIONS139

B6 GaAs SINGLE CRYSTAL GROWTH IN SPACE147

B7 IMPROVEMENT OF STOICHIOMETRY IN SEMI-INSULATING GALLIUM ARSENIDE GROWN UNDER MICROGRAVITY167

B8 PRELIMINARY RESULTS OF GaAs SINGLE CRYSTAL GROWTH UNDER HIGH GRAVITY CONDITIONS171

B9 GROWTH OF GaAs SINGLE CRYSTALS AT HIGH GRAVITY176

B10 太空生长掺Te-GaAs单晶的结构缺陷观测181

B11 太空生长半绝缘砷化镓单晶及其应用188

附录 空间生长半绝缘GaAs单晶的器件研究193

C 外延篇198

C（1） 气相外延（VPE）、液相外延（LPE）材料198

C（1）1 VAPOUR PHASE EPITAXIAL GROWTH OF HIGH PURITY GaAs WITH THE AsC13-Ga-N2 SYSTEM200

C（1）2 EPITAXIAL GROWTH OF HIGH PURITY GaAs IN AN ARGON ATMOSPHERE208

C（1）3 GROWTH AND PROPERTIES OF HIGH PURITY LPE-GaAs213

C（1）4 LIQUID PHASE EPITAXY GROWTH AND PROPERTIES OF GaInAsSb/AlGaAsSb/GaSb HETEROSTRUCTURES224

C（1）5 CHANNELING ANALYSIS OF SELF-IMPLANTED AND RECRYSTALLIZED SILICON ON SAPPHIRE232

C（2） 离子束外延（IBE）材料235

C（2）1 CONSTRUCTION AND APPLICATIONS OF A DUAL MASS-SELECTED LOW-ENERGY ION BEAM SYSTEM237

C（2）2 STUDY ON PREPARATION OF GaN and CoSi2 EPITAXIAL FILMS BY MASS ANALYZED LOW ENERGY DUAL ION BEAM EPITAXY244

C（2）3 HIGH QUALITY CeO2 FILM GROWN ON Si（111）SUBSTRATE BY USING LOW ENERGY DUAL ION BEAM DEPOSITION TECHNOLOGY248

C（2）4 GERMANIUM EPITAXY ON SILICON BY IONIZED-CLUSTER BEAM251

C（2）5 用质量分离的低能离子束外延法生长β-FeSi2半导体外延膜的初步研究256

C（3） 金属有机化学气相淀积（MOCVD）材料260

C（3）1 THE INFLUENCE OF THICKNESS ON PROPERTIES OF GaN BUFFER LAYER AND HEAVILY Si-DOPED GaN GROWN BY METALORGANIC VAPOR-PHASE EPITAXY261

C（3）2 THE DEPENDENCE OF GROWTH RATE OF GaN BUFFER LAYER ON GROWTH PARAMETERS BY METALORGANIC VAPOR-PHASE EPITAXY266

C（3）3 GaN m-i-n LED GROWN BY MOVPE272

C（3）4 GROWTH OF GaSb AND GaAsSb IN THE SINGLE PHASE REGION BY MOVPE277

C（3）5 r-Al2O3/Si（100）薄膜高真空MOCVD异质外延生长284

C（4） 分子束外延（MBE）材料288

C（4）1 EXCESS ARSENIC IN GaAs GROWN AT LOW TEMPERATURES BY MOLECULAR BEAM EPITAXY289

C（4）2 INTRABAND ABSORPTION IN THE 8－12 μm BAND FROM Si-DOPED VERTICALLY ALIGNED InGaAs/GaAs QUANTUM-DOT SUPERLATTICE293

C（4）3 STRUCTURAL CHARACTERIZATION OF InGaAs/GaAs QUANTUM DOTS SUPERLATTICE INFRARED PHOTODETECTOR STRUCTURES298

C（4）4 GAS SOURCE MOLECULAR BEAM EPITAXY OF HIGH-QUALITY STRAINED Si1-XGeX/Si SUPERLATTICE MATERILAS306

C（4）5 INFLUENCE OF CRYSTAL PERFECTION ON THE REVERSE LEAKAGE CURRENT OF THE SiGe/Si p-n HETEROJUNCTION DIODES309

C（4）6 气态源分子束外延GeSi合金中的低温生长动力学研究314

C（4）7 GSMBE生长掺杂Si及GeSi/Si合金及其电学性质研究318

C（4）8 GSMBE原位生长SiGe HBT材料324

C（4）9 ELECTRICAL PROPERTIES OF GaN DEPOSITED ON NITRIDATED SAPPHIRE BY MOLECULAR BEAM EPITAXY USING NH3 CRACKED ON THE GROWING SURFACE328

C（4）10 FERMI-EDGE SINGULARITY OBSERVED IN A MODULATION-DOPED AlGaN/GaN HETEROSTRUCTURE332

C（4）11 p-TYPE CO-DOPING STUEY OF GaN BY PHOTOLUMINESCENCE336

C（4）12 THE EFFECT OF BURIED Alx Ga1-x N ISOLATING LAYERS ON THE TRANSPORT PROPERTIES OF GaN DEPOSITED ON SAPPHIRE SUBSTRATE BY MOLECULAR BEAM EPITAXY USING NH3340

C（4）13 HYDROGEN CONTAMINANT AND ITS CORRELATION WITH BACKGROUND ELECTRONS IN GaN344

C（4）14 GSMBE CaN膜的电子输运性质研究350

C（4）15 THE GROWTH OF SiC ON Si SUBSTRATES WITH C2H4 AND Si2H6356

C（4）16 THE EFFECTS OF CARBONIZED BUFFER LAYER ON THE GROWTH OF SiC ON Si364

C（4）17 Si（100）面上3C-SiC的生长368

C（4）18 SiC单晶的生长及其器件研制进展372

C（5） 纳米材料379

C（5）1 NEW OBSERVATION ON THE FORMATION OF PBS CLUSTERS IN ZEOLITE-Y379

C（5）2 THERMOLUMINESCENCE OF ZnS NANOPARTICLES383

C（5）3 PHOTOSTIMULATED IUMINESCENCE OF AgI CLUSTERS IN ZEOLITE-Y389

D 物理篇396

D1 ON THE CORRELATION BETWEEN HIGH-ORDER BANDS AND SOME PHOTOLUMINESCENCE LINES IN NEUTRON-IRRADIATED FZ SILICON397

D2 NEUTRON IRRADIATION-INFRARED BASED MEASUREMENT METHOD FOR INTERSTITIAL OXYGEN IN HEAVILY BORON-DOPED SILICON405

D3 DETERMINATION OF INTERSTITIAL OXYGEN CONCENTRATION IN HEAVILY DOPED SILICON BY COMBINATION OF NEUTRON IRRADIATION AND FTIR410

D4 LOW-TEMPERATURE（10 K）INFRARED MEASUREMENT OF INTERSTITIAL OXYGEN IN HEAVILY ANTIMONY-DOPED SILICON VIA WAFER THINNING415

D5 硅中“氢－缺陷络合物”施主行为的研究420

D6 PHOTOCONDUCTIVITY AND ABSORPTION IN a-Si：Cl：H FILMS431

D7 DEPENDENCE OF THE GAP ON HYDROGEN CONTENT IN a-Si：H435

D8 PHOTON ENERGY DEPENDENCE OF SW EFFECT IN α-Si：H FILMS443

D9 氢对氢化无定形硅能隙的影响446

D10 BACKGATING AND LIGHT SENSITIVITY IN GaAs METAL-SEMICONDUCTOR FIELD EFFECT TRANSISTORS453

D11 SIDEGATING EFFECT ON SCHOTTKY CONTACT IN ION-IMPLANTED GaAs459

D12 INFLUENCE OF THE SEMI-INSULATING GaAs SCHOTTKY PAD ON THE SCHOTTKY BARRIER IN THE ACTIVE LAYER462

D13 INTERFACE ROUGHNESS SCATTERING IN GaAs-AlGaAs MODULATION-DOPED HETEROSTRUCTURES466

D14 INFLUENCE OF DX CENTERS IN THE Alx Ga1-x AS BARRIER ON THE LOW-TEMPERATURE DENSITY AND MOBILITY OF THE TWO-DIMENSIONAL ELECTRON GAS IN GaAs/AlGaAs MODULATION-DOPED HETEROSTRUCTURE471

D15 MAGNETOSPECTROSCOPY OF BOUND PHONONS IN HIGH PURITY GaAs476

D16 PROPERTIES OF GaAs SINGLE CRYSTALS GROWN BY MOLECULAR BEAM EPITAXY AT LOW TEMPERATURES482

D17 高纯外延GaAs中浅施主杂质的光热电离谱研究488

后记495